Today’s more sophisticated, more highly integrated semiconductor devices are the result of ever more advanced microfabrication techniques and the use of new materials. Since these techniques and materials determine device life, high precision electromigration evaluations under more rigorous accelerated stress test conditions are becoming increasingly important to developers. The Electromigration Evaluation System offers high-precision measurement under temperature (up to 400°C) and current stresses ― the key conditions for accelerated stress testing.